| 摘要 |
According to one embodiment, a method for fabricating a semiconductor device includes performing a back surface processing to remove at least one of a scratch and a foreign material formed on a back surface of a substrate to be processed, a front surface of the substrate being retained in a non-contact state, contacting the back surface of the substrate to a stage to be retained, and providing a pattern on the front surface of the substrate by using lithography.
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