Insulation film forming material, insulation film, method for forming the insulation film, and semiconductor device

摘要

Porous insulation films 28, 40, 50 are formed of an insulation forming material including a silicon compound having a skeleton containing C-C bonds, a pore forming compound which is decomposed or evaporated by a heat treatment, and a solvent which dissolves the silicon compound with the pore forming compound, whereby the porous insulation film can have good mechanical strength and low dielectric constant.