发明名称 |
CHUNK POLYCRYSTALLINE SILICON AND PROCESS FOR CLEANING POLYCRYSTALLINE SILICON CHUNKS |
摘要 |
The invention provides chunk polycrystalline silicon having a concentration of carbon at the surface of 0.5-35 ppbw. A process for cleaning polycrystalline silicon chunks having carbon contaminations at the surface, comprising a thermal treatment of the polycrystalline silicon chunks in a reactor at a temperature of 350 to 600°, the polycrystalline silicon chunks being present in an inert gas atmosphere during the thermal treatment, and the polycrystalline silicon chunks after the thermal treatment having a concentration of carbon at the surface of 0.5-35 ppbw. |
申请公布号 |
CA2803383(A1) |
申请公布日期 |
2013.08.21 |
申请号 |
CA20132803383 |
申请日期 |
2013.01.24 |
申请人 |
WACKER CHEMIE AG |
发明人 |
TRAUNSPURGER, GERHARD;FABRY, LASZLO;PECH, REINER |
分类号 |
C30B29/06;C30B33/02 |
主分类号 |
C30B29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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