发明名称 THIN FILM TRANSISTOR AND DISPLAY PANEL EMPLOYING THE SAME
摘要 <p>PURPOSE: A thin film transistor and a display panel adopting the same are provided to improve electro-optic reliability by forming a structure to minimize external light which is inputted to a channel layer. CONSTITUTION: A first passivation layer (130) covers a gate (120). A channel layer (140) is formed on the first passivation layer. A source (160) and a drain (150) are in contact with both sides of the channel layer. A second passivation layer (170) covers the channel layer, the source, and the drain. A first transparent electrode layer (181) and a second transparent electrode layer (182) are separately formed on the second passivation layer.</p>
申请公布号 KR20130092848(A) 申请公布日期 2013.08.21
申请号 KR20120014404 申请日期 2012.02.13
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 JEON, SANG HUN;SONG, I HUN;KIM, CHANG JUNG;AHN, SEUNG EON
分类号 H01L29/786;G02F1/136;H01L21/336 主分类号 H01L29/786
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