发明名称 |
THIN FILM TRANSISTOR AND DISPLAY PANEL EMPLOYING THE SAME |
摘要 |
<p>PURPOSE: A thin film transistor and a display panel adopting the same are provided to improve electro-optic reliability by forming a structure to minimize external light which is inputted to a channel layer. CONSTITUTION: A first passivation layer (130) covers a gate (120). A channel layer (140) is formed on the first passivation layer. A source (160) and a drain (150) are in contact with both sides of the channel layer. A second passivation layer (170) covers the channel layer, the source, and the drain. A first transparent electrode layer (181) and a second transparent electrode layer (182) are separately formed on the second passivation layer.</p> |
申请公布号 |
KR20130092848(A) |
申请公布日期 |
2013.08.21 |
申请号 |
KR20120014404 |
申请日期 |
2012.02.13 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JEON, SANG HUN;SONG, I HUN;KIM, CHANG JUNG;AHN, SEUNG EON |
分类号 |
H01L29/786;G02F1/136;H01L21/336 |
主分类号 |
H01L29/786 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|