| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device, which can achieve high-density packaging while suppressing yield deterioration. <P>SOLUTION: A manufacturing method of a semiconductor device comprises: a first step of preparing a first semiconductor device 110; a second step of coating the front face of a semiconductor element 1b and an interconnection 2 formed on the front face of the semiconductor element 1b with a sealing resin 5b, grinding the front face of the sealing resin 5b to expose the interconnection 2 from the sealing resin 5b, forming a groove 9 extending from the sealing resin 5b to the semiconductor element 1b, and preparing a second semiconductor device 120 formed by grinding the rear face of the semiconductor element 1b; and a third step of mounting the second semiconductor device 120 in a state that the terminal formation face of the second semiconductor device 120 and the terminal formation face of the first semiconductor device 110 face each other. <P>COPYRIGHT: (C)2012,JPO&INPIT</p> |
