ELECTRIC CIRCUIT SWITCHING DEVICE

摘要

A switching device (10) has a main IGFET (11) having a Schottky barrier diode D3 for blocking an inverse current built therein, a protective switch means (12), and a protective switch control means (13). The protective switch means (12) is connected in between a drain electrode D and a gate electrode G of the main IGFET (11). The protective switch control means (13) turns on the protective switch means (12) when an inverse voltage is impressed to the main IGFET (ill). Thereby, the main IGFET (11) is protected from the inverse voltage.