| 摘要 |
PURPOSE: A wire structure of a semiconductor device and a manufacturing method thereof are provided to suppress an RC delay by reducing parasitic capacitance between wires. CONSTITUTION: A first insulation layer (210) is formed on a semiconductor substrate (100). A wire mold layer (400) including a trench (411) is formed on the first insulation layer. A sidewall protection layer (511) including a silicide layer of a first metal is formed on the sidewall of the trench. A second metal wire (535) filling the trench is formed. A top protection layer (550) which protects the top surface of the second metal wire is formed. |
