摘要 |
A data writing method for writing data belonging to a logical page into a rewritable non-volatile memory module is provided. In the data writing method, a mark count value is set for each logical page. Whether the mark count value corresponding to the logical page is greater than a predetermined threshold is determined. If the mark count value corresponding to the logical page is not greater than the predetermined threshold, the mark count value corresponding to the logical page is counted, and the data and the mark count value corresponding to the logical page are written into a first storage area or a second storage area. Otherwise, the data and the mark count value corresponding to the logical page are written into the second storage area. Thereby, data stored in the rewritable non-volatile memory module can be effectively identified and data loss caused by power failure can be avoided.
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