Semiconductor device including a phase-change memory element

摘要

A semiconductor device may include, but is not limited to: a first insulating film; a second insulating film over the first insulating film; a first memory structure between the first and second insulating films; and a third insulating film between the first and second insulating films. The first memory structure may include, but is not limited to: a heater electrode; and a phase-change memory element between the heater electrode and the second insulating film. The phase-change memory element contacts the heater electrode. The third insulating film covers at least a side surface of the phase-change memory element. Empty space is positioned adjacent to at least one of the heater electrode and the third insulating film.