| 摘要 |
Provided is a semiconductor memory device that is capable of stably programming with desirable controllability to a desired electric resistance state in a random access programming action and is provided with a variable resistance element. Regardless of a resistance state of a variable resistance element of a memory cell that is a target of a writing action (erasing and programming actions), an erasing voltage pulse for bringing the resistance state of the variable resistance element to an erased state having a lowest resistance value is applied. Thereafter, a programming voltage pulse for bringing the resistance state of the variable resistance element to a desired programmed state is applied to the variable resistance element of the programming action target memory cell. By always applying the programming voltage pulse after having applied the erasing voltage pulse, a plurality of programming voltage pulses being sequentially applied can be avoided.
|
