| 摘要 |
A nitride semiconductor laser diode includes a substrate, an n-side nitride semiconductor layer formed on the substrate, an active layer formed on the n-side nitride semiconductor layer and having a light emitting layer including InxAlyGa1-x-yN (0<x<1, 0 y<1, 0<x+y<1), and a p-side nitride semiconductor layer formed on the active layer. In the nitride semiconductor laser diode, the lasing wavelength of the nitride semiconductor laser diode is 500 nm or greater, dislocations originated in the active layer penetrate through the p-side nitride semiconductor layer, with the dislocation density in the p-side nitride semiconductor layer being 1×106 cm-2 or greater, and the concentration distribution of p-type impurities in the depth direction is such that, from the light emitting layer toward the surface of the p-side nitride semiconductor layer, the concentration of the p-type impurity reaches a maximum value of 5×1018 cm-3 or greater within a range of 300 nm from the top portion of the light emitting layer which is closest to the p-side nitride semiconductor layer, and after reaching the maximum value, the concentration remains at 6×1017 cm-3 or greater in the above-described range of 300 nm.
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