发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
摘要 PURPOSE: A semiconductor device and a manufacturing method thereof are provided to obtain a thin and small semiconductor device by forming a vertical lamination structure consisting of semiconductor chips. CONSTITUTION: An insulating material layer (4) encapsulates semiconductor devices (2b). A metal thin film wiring layer (6) is formed in the insulating material layer. A part of the metal thin film wiring layer is exposed to an outer surface. The electrode pads of the semiconductor devices are electrically connected to the metal thin film wiring layer. [Reference numerals] (AA) Semiconductor device A
申请公布号 KR20130091624(A) 申请公布日期 2013.08.19
申请号 KR20120128794 申请日期 2012.11.14
申请人 J-DEVICES CORPORATION 发明人 SAWACHI SHIGENORI;YAMAGATA OSAMU;INOUE HIROSHI;ITAKURA SATORU;CHIKAI TOMOSHIGE;HORI MASAHIKO;KATSUMATA AKIO
分类号 H01L23/48 主分类号 H01L23/48
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