发明名称 |
CHARGED PARTICLE BEAM DEVICE AND WIRING METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide a wiring method and a charged particle beam device that achieve wiring processing without using gas deposition or the like in a vacuum chamber of the charged particle beam device.SOLUTION: There are provided a wiring method and a charged particle beam device that form a wire of an ion liquid by dripping the ion liquid on a sample table or preparing the ion liquid on the sample table where a sample is placed in advance and irradiating a wiring track between a wiring processing start point and a wiring processing end point with a charged particle beam. With this configuration, the wiring processing can be achieved in a vacuum chamber of the charged particle beam device without using a gas deposition method or the like. |
申请公布号 |
JP2013161647(A) |
申请公布日期 |
2013.08.19 |
申请号 |
JP20120022637 |
申请日期 |
2012.02.06 |
申请人 |
HITACHI HIGH-TECHNOLOGIES CORP |
发明人 |
HASHIMOTO YOICHIRO;NAKAZAWA HIDEKO;KOI ASAMI;TAKEUCHI SHUICHI |
分类号 |
H01J37/20;G01N1/28 |
主分类号 |
H01J37/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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