发明名称 CHARGED PARTICLE BEAM DEVICE AND WIRING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a wiring method and a charged particle beam device that achieve wiring processing without using gas deposition or the like in a vacuum chamber of the charged particle beam device.SOLUTION: There are provided a wiring method and a charged particle beam device that form a wire of an ion liquid by dripping the ion liquid on a sample table or preparing the ion liquid on the sample table where a sample is placed in advance and irradiating a wiring track between a wiring processing start point and a wiring processing end point with a charged particle beam. With this configuration, the wiring processing can be achieved in a vacuum chamber of the charged particle beam device without using a gas deposition method or the like.
申请公布号 JP2013161647(A) 申请公布日期 2013.08.19
申请号 JP20120022637 申请日期 2012.02.06
申请人 HITACHI HIGH-TECHNOLOGIES CORP 发明人 HASHIMOTO YOICHIRO;NAKAZAWA HIDEKO;KOI ASAMI;TAKEUCHI SHUICHI
分类号 H01J37/20;G01N1/28 主分类号 H01J37/20
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