发明名称 REACTOR AND PLASMA PROCESSING APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a reactor structure and a plasma processing apparatus such that gas is efficiently activated and an electrode is hardly damaged.SOLUTION: A reactor 1022 of a plasma processing apparatus includes a flow passage formation body 1062, first electrodes 1082, and second electrodes 1084. The flow formation body 1062 is made of a dielectric. The flow passage formation body 1062 has flow passages 1142 formed. The flow passages 1142 extend in an axial direction. Inner peripheral surfaces 1162 of the flow passages 1142 extend in a peripheral direction. The first electrodes 1082 and second electrodes 1084 are fixed to the flow passage formation body 1062. The first electrodes 1082 and second electrodes 1084 extend along the inner peripheral surfaces 1162. The first electrodes 1082 and second electrodes 1084 are separated in the axial direction. The first electrodes 1082 are not exposed to the inner peripheral surfaces 1162.
申请公布号 JP2013161742(A) 申请公布日期 2013.08.19
申请号 JP20120024824 申请日期 2012.02.08
申请人 NGK INSULATORS LTD 发明人 SHIMODA KENJIRO
分类号 H05H1/24;B01J19/08;F23K5/00 主分类号 H05H1/24
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