| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for washing an SiO-TiOglass substrate, exerting a high washing level while suppressing the occurrence of an concave defect.SOLUTION: In a method for washing a principal surface of an SiO-TiOglass substrate by use of a single-substrate ultrasonic washing device, at least one of the frequency of an ultrasonic wave applied to a washing liquid, the output of the ultrasonic wave, the flow rate of the washing liquid jetted from a nozzle, and the distance between the tip of a washing nozzle and the principal surface of the SiO-TiOglass substrate is adjusted such that the average center radius of cavitation in a position corresponding to the principal surface of the SiO-TiOglass substrate becomes 10 μm or below. |
