发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PROBLEM TO BE SOLVED: To solve a problem that needs are is increasing for an MEMS element embedded type semiconductor integrated circuit device in which MEMS elements are integrated in an integrated circuit chip, a significant cost increase may be caused if processing treatment is performed for the MEMS elements after division into a chip, as for the device, and combination of a WLP process in addition to a usual wafer process is deemed as effective for avoiding the cost increase, but generally, in a usual semiconductor integrated circuit manufacturing process, the MEMS element may be deteriorated in characteristics due to treatment of used dicing, BG treatment, plating treatment and the like which are exposed to strong vibration and the like.SOLUTION: In a method for manufacturing a semiconductor integrated circuit device having an MEMS element integrated over a single semiconductor chip, a movable part of the MEMS element is fixed before the formation of rewiring, and the moving part of the MEMS element is released by etching treatment as a wafer process after dicing treatment.
申请公布号 JP2013154427(A) 申请公布日期 2013.08.15
申请号 JP20120016091 申请日期 2012.01.30
申请人 RENESAS ELECTRONICS CORP 发明人 ARAI KOICHI
分类号 B81C1/00;B81B7/02;G01L9/00;H01L21/301;H01L29/84 主分类号 B81C1/00
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