| 摘要 |
PROBLEM TO BE SOLVED: To provide methods of trimming photoresist patterns.SOLUTION: The methods involve coating a photoresist trimming composition over a photoresist pattern, where the trimming composition includes a matrix polymer, a free acid having fluorine substitution and a solvent, the trimming composition being free of cross-linking agents. The coated semiconductor substrate is heated to cause a change in polarity of the resist polymer in a surface region of the photoresist pattern. The photoresist pattern is brought into contact with a developing solution to remove the surface region of the photoresist pattern. |
