发明名称 |
POST-PASSIVATION INTERCONNECT STRUCTURE AMD METHOD OF FORMING SAME |
摘要 |
A semiconductor device including a dielectric layer formed on the surface of a post-passivation interconnect (PPI) structures. A polymer layer is formed on the dielectric layer and patterned with an opening to expose a portion of the dielectric layer. The exposed portion of the dielectric layer is then removed to expose a portion of the PPI structure. A solder bump is then formed over and electrically connected to the first portion of the PPI structure.
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申请公布号 |
US2013207258(A1) |
申请公布日期 |
2013.08.15 |
申请号 |
US201213370895 |
申请日期 |
2012.02.10 |
申请人 |
CHEN HSIEN-WEI;WU YI-WEN;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
CHEN HSIEN-WEI;WU YI-WEN |
分类号 |
H01L23/498;H01L21/768 |
主分类号 |
H01L23/498 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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