| 摘要 |
A semiconductor memory device includes: a memory cell array including a plurality of memory cells, a plurality of word lines, and a plurality of bit lines, and a control circuit. A first memory cell stores first data of n bits, a second memory cell stores second data used to determine whether data of k bits is stored in the first memory cell, and the control circuit performs first determination of determining data read from the data of the second memory cell, performs second determination of determining data read from the second memory cell by supplying the first word line with a second read voltage different from the first read voltage, and outputs either one of a result obtained by reading the data stored in the first memory cell at the first read voltage and a result obtained by reading the data stored in the first memory cell at the second read voltage, based on a result of the second determination. |
