SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor device having low on-resistance and to provide a method of manufacturing the same.SOLUTION: A first layer 10 of a silicon carbide substrate SC has a first conductivity type and forms a second surface P2. A second layer 21 is provided on the first layer 10 and has a second conductivity type. A third layer 22 is provided on the second layer 21, has the first conductivity type, and forms a first surface P1. A trench TR provided on the first surface P1 has a side wall surface SL. The trench TR penetrates through the third layer 22 and the second layer 21, and reaches the first layer 10. A channel layer 31 is provided on the side wall surface SL and has the first conductivity type. A gate layer 32 sandwiches the channel layer 31 with the side wall surface SL and has the second conductivity type.