| 摘要 |
A nonvolatile semiconductor storage device including a first transistor comprising a first gate electrode including a charge storage layer, an interelectrode insulating film, and a control electrode layer; a second transistor comprising a second gate electrode including a lower electrode, an upper electrode, and an upper silicide portion above the upper electrode; and a third transistor comprising a third gate electrode including a lower electrode, an upper electrode, and an upper silicide portion above the upper electrode; wherein the lower electrodes of the second and the third gate electrodes have a first side and a second side taken along a length direction of the second and the third gate electrodes, the lower electrodes of the second and the third gate electrodes including a lower silicide portion in which at least the first side of the lower electrodes are partially silicided. |
