| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a bonded SOI wafer in which a gettering site is formed at an interface between an SOI layer and an insulator layer (oxide film), and to provide an SOI wafer.SOLUTION: In a method of manufacturing a bonded SOI wafer, bonding is performed in such a condition as an organic substance is attached on a wafer surface before the bonding, and a bond strengthening thermal treatment is performed in a condition in which the organic substance is enclosed at the bonding interface, thereby generating crystal defect at the bonding interface. As a specific method for achieving it, the following methods can be applied: a method of cleaning the wafer surface in an atmosphere containing organic substance; a method of drying the wafer surface in an atmosphere containing the organic substance; a method of processing the wafer surface using cleaning liquid containing the organic substance; a method of applying or dropping a processing liquid containing the organic substance on the wafer surface; or the like. The bonded SOI wafer contains minute crystal defects comprised of SiC and having gettering capability at the bonding interface, thereby capable of effectively removing heavy metal impurity that degrades device characteristics. |
