SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a technique of suppressing deterioration in reliability of a semiconductor device even when microfabrication of a MISFET is promoted.SOLUTION: A high-voltage MISFET Q1 includes on a surface of a drain region, a slant part SLP which slants in a direction apart from a gate electrode G1 and downward from a surface (principal surface) of a semiconductor substrate 1S under the gate electrode G1. Accordingly, an inclination angle between the surface of the drain region and the surface of the semiconductor substrate 1S under the gate electrode G1 is larger than an inclination angle between a surface of a source region and the surface of the semiconductor substrate 1S under the gate electrode G1.