<p>PURPOSE: An ion implanting apparatus is provided to let a cooling plate within a process chamber contact directly with a mask, thereby improving cooling efficiency. CONSTITUTION: A first platen (10) and a second platen (20) are disposed within a process chamber (100). Each mask is fixed at the first platen and the second platen. An ion implanting unit (40) implants ion in one surface of a substrate that is disposed on one of the first and second platens. Each cooling plate (50) is disposed on the first platen and the second platen. The cooling plate contacts with a mask where ion implantation is completed for cooling the mask.</p>
申请公布号
KR20130090539(A)
申请公布日期
2013.08.14
申请号
KR20120011753
申请日期
2012.02.06
申请人
LG ELECTRONICS INC.
发明人
JUN, JONG JIN;LEE, JEH YOUNG;LIM, YOU BONG;KIM, DAE IL