| 摘要 |
<P>PROBLEM TO BE SOLVED: To obtain a light emission spectrum with a full width at half maximum by an LED. <P>SOLUTION: A nitride semiconductor light emitting element has an AlInGaN layer 101 formed of an Al<SB>X</SB>In<SB>Y</SB>Ga<SB>1-X-Y</SB>N (0≤X<1, 0≤Y<1, and 0≤X+Y<1) crystal and spreading in a direction parallel to an (m) plane as the ä1-100} plane of the crystal, and an InGaN light emission layer 102 located on the AlInGaN layer 101 and formed of an In<SB>Z</SB>Ga<SB>1-Z</SB>N (0<Z<1) crystal. The upper surface of the AlInGaN layer 101 includes at least one first inclined plane 101a inclined in a [0001] direction from the (m) plane and at least one second inclined plane 101b inclined in a [000-1] direction from the (m) plane. <P>COPYRIGHT: (C)2010,JPO&INPIT |
