发明名称
摘要 To enable suitable plasma processing with reduced damage to a processing target ascribable to plasma generation. In a plasma processing apparatus including at least: a plasma processing chamber in which plasma processing is applied to a processing target; a processing target supporting means for setting the processing target in the plasma processing chamber; and a plasma generating means for generating a plasma in the plasma processing chamber, the present invention uses, as the plasma generating means, that is capable of supplying intermittent energy.
申请公布号 JP5261436(B2) 申请公布日期 2013.08.14
申请号 JP20100108624 申请日期 2010.05.10
申请人 发明人
分类号 H01L21/31;C23C16/511;H01J37/32;H01L21/3065;H01L21/316;H01L21/318;H05H1/46 主分类号 H01L21/31
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