发明名称 Fault-tolerant non-volatile integrated circuit memory
摘要 <p>Apparatus and methods are disclosed, such as those that store data in a plurality of non-volatile integrated circuit memory devices (306), such as NAND flash, with convolutional encoding. A relatively high code rate for the convolutional code (108/110) consumes relatively little extra memory space. In one embodiment, the convolutional code (108/110) is spread over portions of a plurality of memory devices (106), rather than being concentrated within a page of a particular memory device. In one embodiment, a code rate of m/n is used, and the convolutional code is stored across n memory devices (106).</p>
申请公布号 EP2626863(A1) 申请公布日期 2013.08.14
申请号 EP20130156849 申请日期 2008.10.28
申请人 MICRON TECHNOLOGY, INC. 发明人 RADKE, WILLIAM H.
分类号 G11C16/08;G06F11/10;G11C16/04 主分类号 G11C16/08
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