| 摘要 |
It is intended to provide a semiconductor device comprising a circuit which has a connection between one of a drain and a source of a first MOS transistor and one of a drain and a source of a second MOS transistor. The semiconductor device is characterized by comprising a substrate, a dielectric film on the substrate, and a planar semiconductor layer formed on the dielectric film on the substrate, wherein: the first MOS transistor includes a first drain/source region formed in the planar semiconductor layer, a pillar-shaped semiconductor layer formed on the planar semiconductor layer, a second source/drain region formed in a top portion of the pillar-shaped semiconductor layer, and a gate formed on a sidewall of the pillar-shaped semiconductor layer; and the second MOS transistor includes a third drain/source region formed in the planar semiconductor layer, a pillar-shaped semiconductor layer formed on the planar semiconductor layer, a fourth source/drain region formed in a top portion of the pillar-shaped semiconductor layer, and a gate formed on a sidewall of the pillar-shaped semiconductor layer, and wherein the planar semiconductor layer has a silicide layer formed therein/thereon to connect at least a part of an upper portion of the first drain/source region and at least a part of an upper portion of the third drain/source region. |
