Adaptive write procedures for non-volatile memory

摘要

A method includes performing a write operation on memory cells of a memory array to a first logic state using a voltage of a charge pump. A portion of the write operation is performed on the memory cells of the memory array using the voltage of the charge pump. A level of the voltage is compared to a reference. If the level of the voltage is below the reference, the write operation is continued with an increased level of the voltage by reducing load on the charge pump by providing the voltage on a reduced number of memory cells, wherein the reduced number of memory cells is a first subset of the memory cells.