发明名称 |
Fabrication of replacement metal gate devices |
摘要 |
Methods for polishing multiple dielectric layers to form replacement metal gate structures include a first chemical mechanical polish step to remove overburden and planarize a top layer to leave a planarized thickness over a gate structure. A second chemical mechanical polish step includes removal of the thickness to expose an underlying covered surface of a dielectric of the gate structure with a slurry configured to polish the top layer and the underlying covered surface substantially equally to accomplish a planar topography. A third chemical mechanical polish step is employed to remove the dielectric of the gate structure and expose a gate conductor.
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申请公布号 |
US8507383(B2) |
申请公布日期 |
2013.08.13 |
申请号 |
US201113012879 |
申请日期 |
2011.01.25 |
申请人 |
ANDO TAKASHI;CHARNS LESLIE;CUMMINGS JASON E.;HUPKA LUKASZ J.;KOLI DINESH R.;KONNO TOMOHISA;KRISHNAN MAHADEVAIYER;LOFARO MICHAEL F.;NALASKOWSKI JAKUB W.;NODA MASAHIRO;PENIGALAPATI DINESH K.;YAMANAKA TATSUYA;INTERNATIONAL BUSINESS MACHINES CORPORATION;JRS CORPORATION |
发明人 |
ANDO TAKASHI;CHARNS LESLIE;CUMMINGS JASON E.;HUPKA LUKASZ J.;KOLI DINESH R.;KONNO TOMOHISA;KRISHNAN MAHADEVAIYER;LOFARO MICHAEL F.;NALASKOWSKI JAKUB W.;NODA MASAHIRO;PENIGALAPATI DINESH K.;YAMANAKA TATSUYA |
分类号 |
H01L21/302;C03C15/00;C23F1/00 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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