发明名称 Reflective proximity sensor with improved smudge resistance and reduced crosstalk
摘要 An electronic device includes a protective layer above a proximity sensor having a radiation emitter and a radiation detector. A groove, which may be wedge shaped, is formed in the bottom surface of the protective layer. A radiation barrier, which may be reflective or absorptive material, is placed in the groove in the bottom surface of the protective layer. A light blocking coating may be applied to the bottom surface and the groove of the protective layer to prevent the passage of visible radiation and permit the passage of infrared radiation. A radiation shield may be positioned between the emitter and the detector directly below the radiation barrier. Alignment features may be formed on the mating surfaces of the radiation barrier and radiation shield to align the protective layer with respect to the radiation shield and proximity sensor.
申请公布号 US8507863(B2) 申请公布日期 2013.08.13
申请号 US201213350651 申请日期 2012.01.13
申请人 HOLENARSIPUR PRASHANTH;APPLE INC. 发明人 HOLENARSIPUR PRASHANTH
分类号 G01J5/00 主分类号 G01J5/00
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