PREPARATION METHOD OF CIGS-BASED COMPOUND THIN FILM USING FLUX WITH LOW MELTING POINT AND CI(G)S-BASED COMPOUND THIN FILM PREPARATED BY THE SAME

摘要

PURPOSE: A method for manufacturing a CI(G)S-based thin film for a solar cell by using flux with a low melting point and the CI(G)S-based thin film manufactured by the same are provided to reduce manufacturing costs by selenization at low temperatures. CONSTITUTION: CI(G)S-based nanoparticles are manufactured. The CI(G)S-based nanoparticles and slurry including flux with a melting point between 30 and 400 degrees centigrade are manufactured. A CI(G)S-based precursor thin film is formed by coating the slurry on a substrate without a vibration. The CI(G)S-based precursor thin film is dried. The CI(G)S-based precursor thin film is selenized by using selenium steam. [Reference numerals] (AA) Start; (BB) Manufacture CI(G)S nanoparticles; (CC) Manufacture slurry; (DD) Non-vibration coating; (EE) Dry; (FF) Selenization and thermal process; (GG) Step a; (HH) Step b; (II) Step c; (JJ) Step d; (KK) Step e; (LL) End