| 摘要 |
An etching solution composition is provided to etch molybdenum/aluminum double-layered wiring used as gate wiring and an indium oxide layer used as a pixel electrode at once. An etching solution composition for etching a molybdenum/aluminum bilayer and an indium oxide layer includes (i) 1-10wt% of Fe(NO3)3, (ii) 0.1-2wt% of a fluorine-containing compound, (iii) 2-15wt% of HNO3, (iv) 0.5-5wt% of HCl, and (v) 68-96wt% of water. An etching method of an indium oxide layer includes the steps of: forming an indium oxide layer on a substrate; selectively leaving a photoreactive material on the indium oxide layer; and etching the indium oxide layer using the etching solution composition. |
