发明名称 SEMICONDUCTOR LIGHT EMITTING DEVICE
摘要 Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer. An electrode is on a bottom surface of the light emitting structure and an electrode layer and a conductive support member are disposed on the top surface of the light emitting structure. A recess is recessed from a top surface of the light emitting structure. A transmittive layer is between the light emitting structure and the electrode layer. The transmittive layer includes a first portion having a protrusion disposed in the recess.
申请公布号 US2013200418(A1) 申请公布日期 2013.08.08
申请号 US201313829637 申请日期 2013.03.14
申请人 LG INNOTEK CO., LTD.;LG INNOTEK CO., LTD. 发明人 JEONG HWAN HEE
分类号 H01L33/36 主分类号 H01L33/36
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