| 摘要 |
PURPOSE: A semiconductor device with a conductive plug and a method for manufacturing the same are provided to prevent the generation of voids and seams in a conductive plug pattern by etching a conductive thin film in first and second directions and forming the conductive plug pattern. CONSTITUTION: An active area is formed on a substrate (110). A conductive thin film layer is formed on the substrate (120). The conductive thin film layer is selectively etched to form a bit line trench pattern in a first direction (130). A bit line is formed in the bit line trench pattern (140). The conductive thin film layer is selectively etched to form a plug trench pattern in a second direction vertical to the first direction (150). The plug trench pattern is defined on a part of the active area by filling the conductive plug pattern with an insulating material (160). [Reference numerals] (110) Form an active area, which is insulated by an element separating region and expended along one direction to be arranged on a substrate; (120) Form a conductive thin film layer on the substrate; (130) Form a bit line trench by selectively etching a conductive thin film layer in a first direction which is diagonal to an active region arranged direction; (140) Form a bit line in the bit line trench pattern; (150) Form a plug trench pattern by selectively etching the conductive thin film layer along a second direction which is vertical to the first direction; (160) Define a conductive plug pattern on one part of the active region by filling the inside of the conductive plug pattern with an insulating material; (AA) Start; (BB) End |
