| 摘要 |
A phase change memory device is provided, including: a substrate; a first dielectric layer disposed over the substrate; a first electrode disposed in the first dielectric layer; a second dielectric layer formed over the first dielectric layer, covering the first electrode; a heating electrode disposed in the second dielectric layer, contacting the first electrode; a phase change material layer disposed over the second dielectric layer, contacting the heating electrode; and a second electrode disposed over the phase change material layer, wherein the heating electrode includes a first portion contacting the first electrode and a second portion contacting the phase change material layer, and the second portion of the heating electrode includes metal silicides, and the first portion of the heating electrode includes no metal silicides, and includes refractory metal materials or noble metal materials.
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