发明名称 THIN-FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING A THIN-FILM TRANSISTOR SUBSTRATE
摘要 In a thin-film transistor ("TFT") substrate and a method of manufacturing a TFT substrate, the TFT substrate includes a base substrate, a gate pattern, a source pattern and a pixel electrode. One of the gate pattern and the source pattern includes a pure copper layer, and a conductive layer under the pure copper layer. The conductive layer includes a copper alloy oxide, a copper alloy nitride or a copper alloy oxynitride.
申请公布号 US2013200382(A1) 申请公布日期 2013.08.08
申请号 US201213717795 申请日期 2012.12.18
申请人 SAMSUNG DISPLAY CO., LTD.;SAMSUNG DISPLAY CO., LTD. 发明人 KIM BYEONG-BEOM;PARK JOON-YONG;SHIN SANG-WON;JEONG CHANG-OH
分类号 H01L29/45;H01L21/8232;H01L27/15 主分类号 H01L29/45
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