发明名称 |
THIN-FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING A THIN-FILM TRANSISTOR SUBSTRATE |
摘要 |
In a thin-film transistor ("TFT") substrate and a method of manufacturing a TFT substrate, the TFT substrate includes a base substrate, a gate pattern, a source pattern and a pixel electrode. One of the gate pattern and the source pattern includes a pure copper layer, and a conductive layer under the pure copper layer. The conductive layer includes a copper alloy oxide, a copper alloy nitride or a copper alloy oxynitride.
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申请公布号 |
US2013200382(A1) |
申请公布日期 |
2013.08.08 |
申请号 |
US201213717795 |
申请日期 |
2012.12.18 |
申请人 |
SAMSUNG DISPLAY CO., LTD.;SAMSUNG DISPLAY CO., LTD. |
发明人 |
KIM BYEONG-BEOM;PARK JOON-YONG;SHIN SANG-WON;JEONG CHANG-OH |
分类号 |
H01L29/45;H01L21/8232;H01L27/15 |
主分类号 |
H01L29/45 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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