| 摘要 |
A diaphragm (33) is provided on the top surface of a silicon substrate (32), and on the top surface of the silicon substrate (32), a plate unit (39) made of an insulating material is provided so as to cover the diaphragm (33) separated by a gap. A fixed electrode film (40) is formed on the bottom surface of the plate unit (39) and a capacitor is configured from the diaphragm (33) and the fixed electrode film (40). In the area around the plate unit (39), the outer peripheral edge of the top surface of the silicon substrate (32) is exposed by the plate unit (39) over the entire circumference. Further, an insulating sheet (47) made of an insulating material is formed on a portion of the top surface of the silicon substrate (32) exposed by the plate unit (39), and an electrode pad (48) conducting to the diaphragm (33) and an electrode pad (49) conducting to the fixed electrode film (40) are provided on the top surface of the insulating sheet (47). |
