SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

摘要

Provided are a semiconductor structure and a manufacturing method thereof. The semiconductor structure comprises a substrate (130), a gate stack, a base area (100), and a source/drain area (150). The gate stack is above the base area (100). The source/drain area (150) is in the base area (100). The base area (100) is above the substrate (130). A support isolation structure (123) is provided between the base area (100) and the substrate (130). A part of the support isolation structure (123) is connected to the substrate (130). A cavity (112) is provided between the base area (100) and the substrate (130). The cavity (112) is formed by the base area (100), the substrate (130), and the support isolation structure (123). A stress material layer (113) is provided on two sides of the gate stack, the base area (100) and the support isolation structure (123).