| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device capable of achieving downsizing of a memory cell even if both of a bit line and a source line are formed so as to extend in the same direction, and to provide a method of manufacturing the same.SOLUTION: A semiconductor memory device includes: a first word line 18a and a second word line 18b extending in a first direction; a source line 32 extending in a second direction crossing the first direction, overlapping a source region 22b in a plan view, and connected to the source region via a first conductor plug 30; a first magnetoresistance effect element 40a formed above a first drain region 22a; a second magnetoresistance effect element 40b formed above a second drain region 22c; and a bit line 70 formed above the source line, extending in the second direction, and connected to the first magnetoresistance effect element and the second magnetoresistance effect element. |
