发明名称 Large Size Transmittance Modulation(TM) Blankmask and Manufacturing Method of Large Size Transmittance Modulation(TM) Photomask
摘要 A large sized transmittance modulation blank mask and a method for manufacturing a large sized transmittance modulation photo mask using the same are provided to effectively protect a transparent substrate during a dry etching process by forming an etch stop layer between the transparent substrate and a transmittance control layer. A photoresist pattern(12) is formed by exposing and developing a transmission unit region in order to form a transmission unit and a shielding unit pattern. An anti-reflective layer(10) and a shielding layer(8) are etched by using the photoresist pattern as an etching mask. A transmittance control layer(6) is etched with a dry etching process. The remaining photoresist is removed. A photoresist is formed on the entire surface of the resultant structure on which the pattern is formed. A semi-transmission region is exposed and developed to form a semi-transmission layer. The semi-transmission layer is formed by etching the anti-reflective layer and the shielding layer using the photoresist pattern as an etching mask. The remaining photoresist layer is removed.
申请公布号 KR101294271(B1) 申请公布日期 2013.08.08
申请号 KR20060082658 申请日期 2006.08.30
申请人 发明人
分类号 H01L21/027 主分类号 H01L21/027
代理机构 代理人
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