Semiconductor laser device

摘要

The present invention relates to a semiconductor laser device comprising: a substrate (101); a first semiconductor layer (200) of first conductivity type; an active layer (205); a second semiconductor layer (210) of second conductivity type that is different from the first conductivity type; a waveguide region that is formed in a stripe shape in said first semiconductor layer, said active layer and said second semiconductor layer so that current is restricted to flow in said waveguide region; and resonance surfaces (20) that are substantially perpendicular to said waveguide region; €ƒ€ƒ€ƒ
wherein a plurality of recesses (110).are formed at the surface of said second semiconductor layer (210) in a region that is, in a plan view, apart from said waveguide region and is in the vicinity of one of said resonance surfaces.