| 摘要 |
<p>In order to provide a thin film manufacturing method and a thin film manufacturing apparatus, wherein a thin film with good reproducibility can be manufactured at low cost, and in a way wherein resources are saved, a dummy substrate (S2) is conveyed into a chamber (51), dummy processing gas is supplied to the dummy substrate (S2), a product substrate (S3) is conveyed into the chamber (51), and raw material gas different from the dummy processing gas, and containing therein metal material for manufacturing a thin film with the Metal Organic Chemical Vapor Deposition (MOCVD) method, is supplied to the product substrate (S3). Since the raw material gas is not used as dummy processing gas, the amount of metal material to be used can be inhibited, and a thin film with good reproducibility can be manufactured at low cost, and in a way wherein resources are saved.</p> |
