<p>PURPOSE: A method for forming a nano metal pattern is provided to easily form a uniform recessed metal pattern by a planarization process to remove a protrusive pattern. CONSTITUTION: A substrate is preprocessed (S110). An imprinting resist is laminated on the substrate (S120). A thin film is laminated on the imprinting resist (S130). A first pattern and a second pattern are alternatively formed by patterning the imprinting resist with an imprinting stamp (S140). The first pattern is more protrusive than the second pattern. [Reference numerals] (AA) Start; (BB) Finish; (S110) Preprocess; (S120) Imprinting resist is laminated; (S130) Thin film is laminated; (S140) Imprinting</p>
申请公布号
KR20130087237(A)
申请公布日期
2013.08.06
申请号
KR20120008386
申请日期
2012.01.27
申请人
KOREA INSTITUTE OF MACHINERY & MATERIALS
发明人
CHOI, JUN HYUK;JUNG, JOO YUN;LEE, JI HYE;JEONG, JUN HO;CHOI, DAE GUEN;LEE, EUNG SUG