发明名称 |
Method, device and system for measuring nanoscale deformations |
摘要 |
A method is provided that includes the steps of i) providing a specimen in the form of a wafer having a measurement area and a reference area, assumed to be without deformations and coplanar with the measurement area; ii) illuminating one face of the specimen with an electron beam (Fin); iii) superposing a beam (F1B) of radiation diffracted by the measurement area (B) with a beam (F1A) of the radiation diffracted by the reference so as to cause these two beams to interfere; iv) measuring the spatial periodicity and the orientation of the fringes of the interference pattern (FI); and v) deducing from this a difference in the lattice parameter and/or the orientation between the reference and measurement areas, which is indicative of a state of deformation of the latter at the nanoscale. A device and system for implementing the method is also provided.
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申请公布号 |
US8502143(B2) |
申请公布日期 |
2013.08.06 |
申请号 |
US20080680078 |
申请日期 |
2008.09.17 |
申请人 |
HYTCH MARTIN;SNOECK ETIENNE;HOUDELLIER FLORENT;HUE FLORIAN;CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE |
发明人 |
HYTCH MARTIN;SNOECK ETIENNE;HOUDELLIER FLORENT;HUE FLORIAN |
分类号 |
G01N23/00 |
主分类号 |
G01N23/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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