发明名称 |
Substrate processing apparatus and substrate processing method |
摘要 |
A substrate processing apparatus has: a process chamber in which a substrate is processed; a heating device that optically heats the substrate accommodated in the process chamber from an outer periphery side of the substrate; a cooling device that cools the outer periphery side of the substrate by flowing a fluid in a vicinity of an outer periphery of the substrate optically heated by the heating device; a temperature detection portion that detects a temperature inside the process chamber; and a heating control portion that controls the heating device and the cooling device in such a manner so as to provide a temperature difference between a center portion of the substrate and an end portion of the substrate while maintaining a temperature at the center portion at a pre-determined temperature according to the temperature detected by the temperature detection portion.
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申请公布号 |
US8501599(B2) |
申请公布日期 |
2013.08.06 |
申请号 |
US20070087479 |
申请日期 |
2007.02.21 |
申请人 |
UENO MASAAKI;SHIMADA MASAKAZU;HANASHIMA TAKEO;MORIKAWA HARUO;HAYASHIDA AKIRA;HITACHI KOKUSAI ELECTRIC INC. |
发明人 |
UENO MASAAKI;SHIMADA MASAKAZU;HANASHIMA TAKEO;MORIKAWA HARUO;HAYASHIDA AKIRA |
分类号 |
H01L21/20;C23C16/00;H01L21/36;H05B1/02 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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