发明名称 |
Programmable resistance memory with feedback control |
摘要 |
A programmable resistance memory employs a feedback control circuit to regulate the programming current supplied to a selected programmable resistance memory element. The programmable resistance memory may be a phase change memory. The feedback control circuit monitors and controls the characteristics of a current pulse employed to program a memory cell.
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申请公布号 |
US8503219(B2) |
申请公布日期 |
2013.08.06 |
申请号 |
US201113158531 |
申请日期 |
2011.06.13 |
申请人 |
PARKINSON WARD;OVONYX, INC. |
发明人 |
PARKINSON WARD |
分类号 |
G11C11/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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