| 摘要 |
A method of manufacturing a plurality of semiconductor wafers comprising micro-inspecting at least one location within at least one micro-inspected pattern field and determining at least one parameter value representing a property of the wafer at the micro-inspected location, macro-inspecting a plurality of locations within the at least one micro-inspected pattern field and determining, for each macro-inspected location of the macro-inspected pattern field, at least one parameter value representing the property of the wafer at the macro-inspected location based on the light intensity recorded for the macro-inspected location and on the at least one parameter value representing the property of the wafer at the micro-inspected location of this pattern field.
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