Forming indium gallium nitride, useful for producing semiconductors, comprises partially decomposing precursor containing nitrogen to form nitrogen ions and precursor of group III to form indium and gallium ions at specific growth rate

摘要

Forming indium gallium nitride (InGaN), comprises partially decomposing at least one precursor containing nitrogen to form nitrogen ions, partially decomposing at least one precursor of group III to form indium and gallium ions, and forming InGaN from nitrogen ions, indium ions and gallium ions in a chamber at a growth rate of at least 1 Å /second.