| 摘要 |
PROBLEM TO BE SOLVED: To provide a single crystal SiC substrate, to which characteristics improved for the production of a device are imparted.SOLUTION: A single crystal SiC substrate includes a substrate main surface (35) and a substrate thickness (t), and in the single crystal SiC substrate, a local specific electrical resistance is uniformly distributed in an area of the substrate main surface (35). In the substrate main surface (35), a local specific electrical resistance calculated using the substrate thickness (t) as a standard, for a square first optional partial surface having an area of 4 mm, is different from a local specific electrical resistance of a square second optional partial surface having an area of 4 mm, by 4 m&OHgr;cm at most. |
